2SC2873 2004-07-07 1 toshiba transistor silicon npn epitaxial type (pct process) 2SC2873 power amplifier applications power switching applications ? low saturation voltage: v ce (sat) = 0.5 v (max) (i c = 1 a) ? high-speed switching time: t stg = 1.0 s (typ.) ? small flat package ? p c = 1.0 to 2.0 w (mounted on a ceramic substrate) ? complementary to 2sa1213 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 2 a base current i b 0.4 a p c 500 collector power dissipation p c (note 1) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on a ceramic substrate (250 mm 2 0.8 t) unit: mm jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SC2873 2004-07-07 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 50 v, i e = 0 D D 0.1 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 0.1 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 50 D D v h fe (1) (note 2) v ce = 2 v, i c = 0.5 a 70 D 240 dc current gain h fe (2) v ce = 2 v, i c = 2.0 a 20 D D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 0.05 a D D 0.5 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 0.05 a D D 1.2 v transition frequency f t v ce = 2 v, i c = 0.5 a D 120 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 30 D pf turn-on time t on D 0.1 D storage time t stg D 1.0 D switching time fall time t f D 0.1 D s note 2: h fe (1) classification o: 70 to 140, y: 120 to 240 marking 30 ? i b1 i b1 20 s i b1 = ? i b2 = 0.05 a, duty cycle 1% i b2 i b2 output input m part no. (or abbreviation code) lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. characteristics indicator
2SC2873 2004-07-07 3 collector-emitter saturation voltage v ce (sat) (v) v be (sat) ? i c v ce (sat) ? i c v ce ? i c h fe ? i c collector current i c (a) v ce ? i c v ce ? i c collector current i c (a) collector-emitter voltage v ce (v) collector current i c (ma) base-emitter saturation voltage v be (sat) (v) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (ma) collector-emitter voltage v ce (v) collector current i c (ma) dc current gain h fe 2.0 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 30 i b = 5 ma 40 20 10 common emitter ta = 25c 2.0 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 10 i b = 5 ma 20 30 50 common emitter ta = ? 55c 40 10 100 100 30 30 50 common emitter v ce = 2 v 10 300 1000 300 ta = 100c ? 55 3000 500 1000 25 10 0.1 100 30 0.03 0.05 common emitter i c /i b = 20 0.01 300 1000 0.3 ta = 100c ? 55 3000 0.5 1 25 10 100 3000 30 0.3 0.1 300 1000 1 5 10 3 0.5 ta = ? 55c 25 100 common emitter i c /i b = 20 50 2.0 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 40 30 20 10 5 i b = 3 ma common emitter ta = 100c
2SC2873 2004-07-07 4 collector current i c (ma) collector-emitter voltage v ce (v) collector current i c (a) safe operating area i c ? v be base-emitter voltage v be (v) ambient temperature ta (c) collector power dissipation p c (w) 2.0 1.6 1.2 0.8 0.4 0 0 0.5 1.0 1.5 2.0 common emitter v ce = 2 v ta = 100c ? 55 25 p c ? ta 0 0 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) mounted on a ceramic substrate (250 mm 2 0.8 t) (2) no heat sink 0.1 3 0.3 5 1 10 100 30 10 30 50 100 300 500 1000 3000 5000 dc operation ta = 25c i c max (pulse) * i c max (continuous) 10 ms * v ceo max 100 ms * 1 s * 1 ms * * : single no repetitive pulse ta = 25c curves must be derated linearly with increase in temperature tested without a substrate
2SC2873 2004-07-07 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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